Write-once read-many times memory
AssigneeSpansion LLC
InventorsMichael VanBuskirk, Colin Bill, Zhida Lan, Tzu-Ning Fang
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Abstract
A write-once read-many times memory device is made up of first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrode. The memory device is programmed by providing a charged species from the passive layer into the active layer. The memory device may be programmed to have for the programmed memory device a first erase activation energy. The present method provides for the programmed memory device a second erase activation energy greater than the first erase activation energy.
Claims27
A method of undertaking an operation on a memory device, the memory device comprising first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes, wherein the memory device is programmed by providing a charged species from the passive layer into the active layer, wherein the memory device may be programmed to have for the programmed memory device a first erase activation energy, the method comprising providing for the programmed memory device a second erase activation energy greater than the first erase activation energy.
The method of claim and 3 wherein the active layer comprises low conductive semiconductor material.
The method of claim and 12 wherein the active layer comprises low conductive semiconductor material.
A method of programming a memory device, the memory device comprising first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes, wherein the memory device may be programmed by applying a required electrical potential to the memory device, the method comprising programming the memory device by applying an electrical potential to the memory device which is substantially greater than the required electrical potential.
A write-once read-many times memory comprising first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second electrodes.
Dependencies are inferred from the claim text.