Semiconductor integrated circuit and nonvolatile memory element

A semiconductor integrated circuit device on a semiconductor substrate, comprising:

• a plurality of word lines;
• a plurality of data lines;
• and
• a plurality of electrically programmable and erasable non-volatile memory cells coupled to the plurality of word lines and to the plurality of data lines so that each electrically programmable and erasable non-volatile memory cell is coupled to one of the word lines and to one of the data lines, each electrically programmable and erasable non-volatile memory cell comprising a pair of memory elements each of which includes:
• a MIS transistor having a floating gate comprised of a first level polycrystalline silicon layer, a source, and a drain coupled to the corresponding data line, and
• control means for controlling programming and erasing of the electrically programmable and erasable non-volatile memory cells, said control means being comprised of a semiconductor region in the semiconductor substrate, the control means being coupled to the corresponding word line.