Method of programming memory cell array
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-beom Kang, Du-eung Kim, Baek-hyung Cho, Hye-jin Kim
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Abstract
A method of programming a memory array including a plurality of memory cells is provided. The memory cells may include phase-change memory elements. In one aspect, the method includes applying in succession first through nth current pulses to each of the memory cells to be programmed to a first state (e.g., a crystalline state), where a current amplitude of the first through nth current pulses decreases with each successive pulse, and where a pulse duration of the first through nth current pulses increases with each successive pulse.
Claims20
A method of programming a memory array including a plurality of memory cells, said method comprising applying in succession first through nth current pulses to each of the memory cells to be programmed to a first state, wherein a current amplitude of the first through nth current pulses decreases with each successive pulse, and wherein a pulse duration of the first through nth current pulses increases with each successive pulse.
A method of programming a memory array including a plurality of memory cells, said method comprising:
- applying a first current pulse to the memory array to at least partially program a corresponding memory cell to a first state;
- and
- applying in succession second through nth current pulses to the corresponding memory cell which was at least partially programmed to the first state by the first current pulse;
- wherein a current amplitude of the first through nth current pulses decreases with each successive pulse, and wherein a pulse duration of the first through nth current pulses increases with each successive pulse.
A method of programming a memory array including a plurality of memory cells, said method comprising:
- applying at least one first current pulse to a memory cell of the memory array to program the memory cell into a first state;
- and
- applying at least one second current pulse to the memory cell while the memory cell remains in the first state,
- wherein a current amplitude of the at least one first current pulse is greater than a current amplitude of the at least one second current pulse, and wherein a pulse duration of the at least one first current pulse is less than a pulse duration of the at least one second current pulse.
Dependencies are inferred from the claim text.