Semiconductor memory device for low voltage
AssigneeHynix Semiconductor Inc.
InventorsHee-Bok Kang, Jin-Hong Ahn
Life of this patent
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Abstract
A semiconductor memory device includes a read amplifying unit for transferring a data from a local data line pair to a global data line as a read data; a write driver for transferring a write data from the global data line to the local data line pair; and an input/output (I/O) switching unit for transferring the read data from a segment data line pair to the local data line pair and for transferring the write data from the local data line pair to the segment data line pair, wherein each of the local data line pair and the segment line pair includes a VDD precharge block.
Claims20
A semiconductor memory device, comprising:
- a read amplifying unit for transferring a data from a local data line pair to a global data line as a read data;
- a write driver for transferring a write data from the global data line to the local data line pair;
- and
- an input/output (I/O) switching unit for transferring the read data from a segment data line pair to the local data line pair and for transferring the write data from the local data line pair to the segment data line pair,
- wherein each of the local data line pair and the segment line pair includes a VDD precharge block.
A method for operating a semiconductor memory device provided with a power supply voltage and a ground voltage, comprising the steps of:
- a) inputting signals to a bit line and a bit line bar corresponding to a stored data;
- b) amplifying a higher voltage level between the bit line and the bit line bar to the power supply voltage and amplifying the lower voltage level to a low voltage which is lower than the ground voltage, and latching the amplified signals;
- c) transferring the signal having the power supply voltage level and the signal having the low voltage level through a first and a second data lines;
- and
- d) outputting a data corresponded to the transferred signal to the outside of the semiconductor memory device.
A method for operating a semiconductor memory device provided with a power supply voltage and a ground voltage, comprising the steps of:
- a) inputting signals to a bit line and a bit line bar corresponding to a stored data;
- b) amplifying a higher voltage level between the bit line and the bit line bar to the power supply voltage and amplifying the lower voltage level to a low voltage which is lower than the ground voltage, and latching the amplified signals;
- c) receiving a data corresponding to a write command;
- d) delivering a first signal having the power supply voltage level and a second signal having a low voltage level which is lower than the ground voltage to a first and a second data lines, wherein the first and the second signals correspond to the data;
- e) replacing the latched signals with the first and the second signals;
- and
- f) storing a data corresponded to the first and the second signals.
Dependencies are inferred from the claim text.