Capacitive coupling plasma processing apparatus

A capacitive coupling plasma processing apparatus comprising:

• a process chamber configured to have a vacuum atmosphere;
• a process gas supply section configured to supply a process gas into the chamber;
• a first electrode disposed in the chamber and configured to support a target substrate thereon;
• a second electrode disposed opposite the first electrode in the chamber, and comprising an inner segment and an outer segment disposed around and separated from the inner segment,
• an RF power supply configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field;
• and
• a DC power supply configured to apply a DC voltage to at least one of the inner segment and the outer segment, such that the DC voltage of the DC power supply is applied to cause the inner segment to have an electric potential higher than that of the outer segment.