Back to results
US 2006/0221512 A1Published application
Sensitivity GMR sensors
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsHardayal Gill, Neil Smith
Life of this patent
Estimating the term…
Abstract
Improved sensitivity GMR sensors useful for thin film magnetic read heads are disclosed. Spin transfer induced destabilization of the magnetic free layer is suppressed through the application of Tb containing alloys in the free layer. Sense currents can be increased by a factor of five in comparison to prior art designs without an increase in spin transfer induced noise.
Claims26
A GMR sensor comprising:
- an anti-ferromagnetic layer;
- a first pinned layer coupled to said anti-ferromagnetic layer;
- an interface layer formed over said first pinned layer;
- a second pinned layer formed over said interface layer;
- a spacer layer formed over said second pinned layer;
- and,
- a free layer comprising a NiFeTb alloy formed over said spacer layer.
4 more elements
A dual GMR sensor comprising:
- a first anti-ferromagnetic layer;
- a first pinned layer formed over said first anti-ferromagnetic layer;
- a first spacer layer formed over said first pinned layer;
- a second anti-ferromagnetic layer;
- a second pinned layer formed over said second anti-ferromagnetic layer;
- a second spacer layer formed over said second pinned layer;
- and,
- a free layer interposed between said first and said second spacer layers, said free layer comprising a NiFeTb alloy.
5 more elements
A dual GMR sensor comprising:
- a first anti-ferromagnetic layer;
- a first pinned layer formed over said first anti-ferromagnetic layer;
- a second anti-ferromagnetic layer;
- a second pinned layer formed over said second anti-ferromagnetic layer;
- and,
- a free layer interposed between said first and said second pinned layers, said free layer comprising a NiFeTb alloy.
3 more elements
Dependencies are inferred from the claim text.