Method and apparatus for end-point detection
AssigneeACM Research, Inc.
InventorHui Wang
Life of this patent
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Abstract
An apparatus for detecting the end-point of an electropolishing process of a metal layer formed on a wafer (1004) includes an end-point detector. The end-point detector is disposed adjacent the nozzle (1008) used to electropolish the wafer. In one embodiment, the end-point detector is configured to measure the optical reflectivity of the portion of the wafer being electropolished.
Claims20
An apparatus for monitoring the end-point of an electropolishing process of a metal layer formed on a wafer, comprising:
- a nozzle configured to electropolish the metal layer;
- and
- an end-point detector disposed adjacent to said nozzle.
An apparatus for monitoring the thickness of a metal layer on a wafer during an electropolishing process:
- a nozzle configured to electropolish discrete portions of the wafer;
- and
- an end-point detector configured to measure the change in optical reflectivity of the discrete portions being electropolished.
A method of detecting the end-point of an electropolishing process of a wafer, comprising:
- electropolishing a discrete portion of the wafer;
- obtaining a measured optical reflectivity of said discrete portion;
- determining a target optical reflectivity of said discrete portion of said wafer;
- and
- comparing said measured optical reflectivity to said target optical reflectivity.
Dependencies are inferred from the claim text.