Solid-state imaging device and manufacture therof

A method for manufacturing a solid-state imaging device including a semiconductor substrate, the semiconductor substrate including a charge transfer part for transferring signal charges and a bus line part for supplying transfer pulses to the charge transfer part, wherein the charge transfer part includes a transfer channel formed in the semiconductor substrate as well as a plurality of first transfer electrodes and a plurality of second transfer electrodes that are disposed on the transfer channel so as to cross the transfer channel, the method comprising the steps of:

• (a) forming the transfer channel in the semiconductor substrate;
• (b) forming a first conductive film on the semiconductor substrate and patterning the first conductive film so as to form the plurality of first transfer electrodes;
• (c) forming first interlayer insulation films around the first transfer electrodes for providing insulation between the first transfer electrodes and the second transfer electrodes;
• (d) forming a second conductive film to cover the first transfer electrodes and the semiconductor substrate;
• (e) patterning the second conductive film so that the second conductive film remain on the first transfer electrodes at least in a region overlapping a place where bus line wires are formed in a thickness direction of the semiconductor substrate;
• and
• (f) forming a resist pattern so that in a region where the transfer channel is formed, the resist pattern has openings such that portions of the second conductive film overlapping the first interlayer insulation films in the thickness direction of the semiconductor substrate are not covered entirely or partially, and carrying out isotropic etching by using the resist pattern as a mask, so as to form the second transfer electrodes.