Thin film device
AssigneeTDK Corporation
InventorToshiyasu Fujiwara
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Abstract
The present invention provides a thin film device in which parasitic capacitance can be reduced as much as possible. In the case where a coil is provided so as to be insulated between an upper magnetic film and a lower magnetic film, the coil is constructed so that the cross section of the coil has the minimum width at its edges closest to the upper and lower magnetic films. Parasitic capacitance generated between the coil and the lower magnetic film and parasitic capacitance generated between the coil and the upper magnetic film are reduced and, in addition, parasitic capacitance generated between turns of the coil is also reduced.
Claims10
A thin film device comprising a coil provided for a base body having conducting properties so as to be insulated from the base body,
- wherein cross section of the coil has the minimum width at its edge closest to the base body.
Dependencies are inferred from the claim text.