Internal voltage generating apparatus adaptive to temperature change
AssigneeHynix Semiconductor Inc.
InventorsSang-Jin Byeon, Seok-Cheol Yoon
Life of this patent
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Abstract
An internal voltage generating apparatus adaptive to a temperature change includes a reference voltage circuit including a complementary to absolute temperature (CTAT) type transistor and a proportional to absolute temperature (PTAT) type transistor for generating a first to a third initial reference voltage signals. A buffer circuit for buffering a first, a second and a third initial reference voltage signal is included to generate a first, a second, and a third reference voltage signal in response to enable signals. An internal voltage generating circuit is included to generate an internal voltage signal based on the first, the second and the third reference voltage signal by using an inputted power voltage.
Claims15
An internal voltage generating apparatus of a semiconductor device, comprising:
- a reference voltage circuit including a complementary to absolute temperature (CTAT) transistor and a proportional to absolute temperature (PTAT) transistor for generating a first, a second and a third initial reference voltage signal;
- a buffer circuit for buffering the first, the second and the third initial reference voltage signal to generate a first, a second and a third reference voltage signal in response to enable signals;
- and
- an internal voltage generating circuit for generating an internal voltage signal based on the first, the second and the third reference voltage signal by using an inputted power voltage.
Dependencies are inferred from the claim text.