Multi-chip semiconductor device with high withstand voltage, and a fabrication method of the same
AssigneeRicoh Company, Ltd.
InventorsHiroshi Fujito, Yasuhiro Takamori
Life of this patent
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Abstract
A multi-chip semiconductor device includes a substrate, a first semiconductor chip, a second semiconductor chip, and a plastic mold. The first semiconductor chip has a function for executing a predetermined electrical operation and is installed on the substrate. The second semiconductor chip is installed on the first semiconductor chip and is configured to integrate a power circuit to receive an external power supply and to supply an electric power to the first semiconductor chip based on the external power supply. The plastic mold seals together the first and second semiconductor chips on the substrate.
Claims22
A multi-chip semiconductor device, comprising:
- a substrate;
- a first semiconductor chip having a function for executing a predetermined electrical operation and installed on the substrate;
- a second semiconductor chip installed on the first semiconductor chip and configured to integrate a power circuit to receive an external power supply and to supply an electric power to the first semiconductor chip based on the external power supply;
- and
- a plastic mold sealing together the first and second semiconductor chips on the substrate.
A method for fabricating a multi-chip semiconductor device, comprising the steps of:
- providing a first semiconductor chip having a function for executing a predetermined electrical operation and installed on a substrate;
- placing a second semiconductor chip on the first semiconductor chip, the second semiconductor chip being configured to integrate a power circuit to receive an external power supply and to supply an electric power to the first semiconductor based on the external power supply;
- and
- sealing together the first and second semiconductor chips with a plastic mold on the substrate.
Dependencies are inferred from the claim text.