Plasma processing method and apparatus, and autorunning program for variable matching unit
AssigneeTokyo Electron Limited
InventorHiroshi Ogawa
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AssigneeTokyo Electron Limited
InventorHiroshi Ogawa
Estimating the term…
A plasma processing apparatus includes an upper matching unit 44 which is a variable matching unit whose impedance can be varied, and a main controller 100. The upper matching unit 44 includes a controller 104 for variably controlling the impedance positions of a variable reactance element of a matching circuit 102, a RF sensor for measuring a load impedance including the matching circuit 102, and a VPP measuring circuit 112 for measuring a peak value (peak-to-peak value) of a radio frequency voltage in a waveguide line at the output side of the upper matching unit 44. The main controller 100 executes and controls an autorunning of the matching units 44, 88 for optimizing an off preset of the impedance positions thereof. The plasma can be readily get ignited without requiring to set or change special processing conditions while influencing none of the processes.
A plasma processing method for performing a plasma process on a substrate disposed in a depressurizable chamber by applying a first radio frequency power of a first frequency from a first radio frequency power supply to a first radio frequency electrode disposed inside or outside the chamber via a first variable matching unit to generate a plasma in the chamber, the method comprising:
A plasma processing method comprising:
A plasma processing apparatus comprising:
An autorunning program for determining an off preset value of impedance positions in a variable matching unit which is connected between a radio frequency power supply and a radio frequency electrode for application of a radio frequency power for generating a plasma from the radio frequency power supply to the radio frequency electrode, the program comprising:
Dependencies are inferred from the claim text.