Semiconductor device and driving method thereof

A semiconductor device comprising:

• a plurality of bit lines extending in a first direction;
• a plurality of word lines extending in a second direction which is perpendicular to the first direction;
• and
• a memory element,
• wherein the memory element has a stacked structure of a first conductive layer forming the bit lines, a layer including an organic compound, and a second conductive layer forming the word lines, and
• wherein the layer including an organic compound includes an organic compound having a glass transition temperature of 50° C. to 200° C.

A semiconductor device comprising:

• a plurality of bit lines extending in a first direction;
• a plurality of word lines extending in a second direction which is perpendicular to the first direction;
• and
• a memory element,
• wherein the memory element has a stacked structure of a first conductive layer forming the bit lines, a layer including an organic compound, and a second conductive layer forming the word lines, and
• wherein the memory element has a bubble between the first conductive layer and the second conductive layer.

A driving method of a semiconductor device comprising the steps of:

• applying a voltage to a memory device in which a first conductive layer, a layer including an organic compound and a second conductive layer;
• generating a bubble between the first conductive layer and the second conductive layer;
• and
• short-circuiting the first conductive layer and the second conductive layer by a pressure based on the generated bubble so as to write data in the memory element.

A driving method of a semiconductor device comprising the steps of:

• applying a voltage to a memory device in which a first conductive layer, a layer including an organic compound and a second conductive layer, to generate heat in the memory element;
• generating a bubble between the first conductive layer and the second conductive layer by the heat generated in the memory element;
• and
• partially changing an interval of the first conductive layer and the second conductive layer by a pressure based on the generated bubble so as to write data in the memory element.