Reducing internal film stress in dielectric film

A method of forming a porous dielectric film comprising:

• depositing precursors to form a dielectric film in a deposition chamber;
• co-depositing with said precursors pore-forming agents;
• forming pores in said dielectric film to form said porous dielectric film;
• treating said porous dielectric film with end-capping reagents to bond less reactive or unreactive groups to active end groups in said porous dielectric film said less reactive or unreactive groups preventing cross-linking among said active end groups.

A microelectronic device comprising:

• a substrate having microelectronic elements formed thereon;
• a porous dielectric film formed on said substrate, said dielectric film having a low-k dielectric constant, said dielectric film having no cross-linking among active end groups present in said dielectric film, the active end groups being capped by less reactive or unreactive end groups;
• and
• one or more conductive interconnects formed on said dielectric film.