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US 2006/0220249 A1Published application
Nobel metal barrier and seed layer for semiconductors
AssigneeIntel Corporation
InventorsSteven Johnston, Juan Dominguez, Michael McSwiney
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Abstract
A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region to prevent oxidation of the barrier between the barrier and noble metal layers to prevent oxidation of the barrier layer.
Claims21
A method in the fabrication of a semiconductor device comprising:
- forming a barrier layer;
- forming an intermediate region on the barrier layer using a noble metal precursor and a reactant to produce a noble metal region having carbide, nitride or silicide;
- and
- forming a noble metal layer on the intermediate region.
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A method for forming a barrier and seed layer comprising:
- introducing into a chamber a barrier metal precursor and a first reactant gas;
- introducing into the chamber a noble metal precursor and a second reactant so as to produce a metal carbide, nitride or silicide region;
- and
- introducing a noble metal precursor into the chamber so as to form a noble metal layer.
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A barrier and seed layer comprising:
- a first region having Ta for forming a barrier;
- a second region disposed on the first region comprising a noble metal carbide, nitride or silicide;
- and
- a noble metal region disposed on the second region.
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A method for forming a barrier layer comprising:
- introducing a tantalum containing precursor into a chamber, the precursor selected from a group consisting of pentakis (t-butyl amino) tantalum, dimetallacyclobutadiene, 1,3-dimetallabenzene, tantalum imido complexes, tantalum carbene complexes, cyclic tantalum siloxyl hydride complex, and phosphorus ligand complex;
- and
- introducing a hydrogen containing gas into the chamber.
Dependencies are inferred from the claim text.