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US 2006/0220247 A1Published application
Semiconductor device and manufacturing method therefor
AssigneeSeiko Epson Corporation
InventorTerunao Hanaoka
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate; an insulation layer which is disposed on the semiconductor substrate and includes a groove formed on a second surface of the insulation layer, opposite from a first surface of the insulation layer facing the semiconductor substrate; and a conductive part disposed on the insulation layer; wherein the conductive part has a wiring part formed in a manner that the wiring part comes in contact with a bottom surface and a side surface of the groove.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- an insulation layer which is disposed on the semiconductor substrate and includes a groove formed on a second surface of the insulation layer, opposite from a first surface of the insulation layer facing the semiconductor substrate;
- and
- a conductive part disposed on the insulation layer;
- wherein the conductive part has a wiring part formed in a manner that the wiring part is in contact with a bottom surface and a side surface of the groove.
2 more elements
A method for manufacturing a semiconductor device, comprising:
- forming an insulation layer on a semiconductor substrate so as to include a groove on a second surface of the insulation layer, opposite from a first surface of the insulation layer facing the semiconductor substrate;
- and
- forming, on the insulation layer, a conductive part having a wiring part in a manner that the wiring part comes in contact with a bottom surface and a side surface of the groove.
Dependencies are inferred from the claim text.