Semiconductor device and manufacturing method therefor
AssigneeNEC Electronics Corporation
InventorMitsuru Oota
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Abstract
To provide a semiconductor device that enables high integration degree, and a manufacturing method therefor. A multi-chip module according to an embodiment of the present invention includes: a first semiconductor chip having a first bonding pad; a second semiconductor chip having a second bonding pad thinner than the first bonding pad; and a bonding wire connected with each of the first bonding pad and the second bonding pad, the first bonding pad being connected with a first bond side end portion of the bonding wire and the second bonding pad being connected with a second bond side end portion of the bonding wire.
Claims11
A semiconductor device, comprising:
- a plurality of semiconductor chips including:
- a first semiconductor chip having a first bonding pad;
- and
- a second semiconductor chip having a second bonding pad thinner than the first bonding pad;
- and
- a bonding wire connected with each of the first bonding pad and the second bonding pad.
A method of manufacturing a semiconductor device including a plurality of semiconductor chips, comprising:
- arranging a first semiconductor chip having a first bonding pad;
- arranging a second semiconductor chip having a second bonding pad thinner than the first bonding pad;
- and
- bonding one end of the bonding wire to the first bonding pad and then bonding the other end of the bonding wire to the second bonding pad.
Dependencies are inferred from the claim text.