Method of forming self-passivating interconnects and resulting devices
AssigneeIntel Corporation
InventorsMauro Kobrinsky, Jun He, Kevin O'Brien, Patrick Morrow, Ying Zhou, Shriram Ramanathan
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Abstract
A method of forming self-passivating interconnects. At least one of two mating bond structures is formed, at least in part, from an alloy of a first metal and a second metal (or other element). The second metal is capable of migrating through the first metal to free surfaces of the mating bond structures. During bonding, the two mating bond structures are bonded together to form an interconnect, and the second metal segregates to free surfaces of this interconnect to form a passivation layer. Other embodiments are described and claimed.
Claims32
A method comprising:
- forming a bond structure on a first substrate, the bond structure of the first substrate including a conductive metal and an element;
- forming a bond structure on a second substrate, the bond structure of the second substrate including the conductive metal and the element;
- and
- bonding the bond structure of the first substrate to the bond structure of the second substrate to form an interconnect between the first and second substrates, wherein the element migrates to free surfaces of the bond structures to form a passivation layer on the interconnect.
A device comprising:
- a first integrated circuit die;
- a second integrated circuit die;
- a plurality of interconnects extending between the first die and the second die, each of the interconnects including a conductive metal;
- and
- a passivation layer disposed over each of the interconnects, the passivation layer including an element capable of migrating through the conductive metal to free surfaces.
A method comprising:
- forming a plurality of bond pads on a first semiconductor wafer including circuitry for a number of die, each of the bond pads including copper and a second metal;
- forming a plurality of bond pads on a second semiconductor wafer including circuitry for a corresponding number of die, each of the bond pads including copper and the second metal;
- and
- bonding each of the plurality of bond pads on the first wafer to a mating one of the plurality of bond pads on the second wafer to form a plurality of interconnects between the first and second wafers, wherein the second metal migrates to free surfaces of the bond pads to form a passivation layer on each of the interconnects.
A method comprising:
- forming a bond structure on a first substrate, the bond structure of the first substrate including a conductive metal and an element;
- forming a bond structure on a second substrate, the bond structure of the second substrate including the conductive metal;
- and
- bonding the bond structure of the first substrate to the bond structure of the second substrate to form an interconnect between the first and second substrates, wherein the element migrates to free surfaces of the bond structures to form a passivation layer on the interconnect.
Dependencies are inferred from the claim text.