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US 2006/0220195 A1Published application
Structure and method to control underfill
AssigneeIntel Corporation
InventorSandeep Sane
Life of this patent
Estimating the term…
Abstract
A silicon die having a junction side being attachable to a substrate, a backside surface spaced from the junction side and an underfill control feature to prevent an underfill from settling above said backside surface is disclosed herein.
Claims25
A silicon die comprising:
- a junction side being attachable to a substrate;
- a backside surface spaced from the junction side;
- and
- an underfill control feature to substantially prevent an underfill from settling above said backside surface.
1 more element
A method comprising:
- providing an underfill control feature to a silicon die, the underfill control feature being capable of limiting settling of a underfill to below a backside surface on the silicon die;
- applying an underfill quantity to the surface of a substrate.
A system comprising:
- a substrate;
- a silicon die attached to said substrate at a junction, said silicon die having a backside surface having a thermal interface plane;
- a DRAM memory device coupled with the silicon die;
- an underfill control feature on said backside surface;
- and
- an underfill near said junction being substantially prevented from settling beyond said thermal interface plane by said underfill control feature.
3 more elements
Dependencies are inferred from the claim text.