Semiconductor device
AssigneeElpida Memory, Inc.
InventorShiro Uchiyama
Life of this patent
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Abstract
A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.
Claims19
A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate, the through-electrode comprising:
- an inner through-electrode;
- a quadrangular ring-shaped semiconductor;
- and an outer peripheral through-electrode, wherein the quadrangular ring-shaped semiconductor is formed around
- the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.
A semiconductor device formed by stacking semiconductor chips, each of the semiconductor chips comprising:
- an inner through-electrode that penetrates a semiconductor substrate;
- a quadrangular ring-shaped semiconductor formed around the inner through-electrode;
- and
- an outer peripheral through-electrode formed around the outer periphery of the quadrangular ring-shaped semiconductor.
Dependencies are inferred from the claim text.