Semiconductor device with extraction electrode
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHideki Takahashi
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHideki Takahashi
Estimating the term…
First and second connection electrodes are formed separately to be opposed to each other on an emitter electrode of an IGBT. Other first and second connection electrodes are formed separately to be opposed to each other on an anode electrode of a diode. A first electrode interconnection part extends from one side portion of an extraction electrode and is bent inwardly. A second electrode interconnection part extends from the other side portion to be opposed to the first electrode interconnection part. The first and second electrode interconnection parts located to face the IGBT are soldered only to the first and second connection electrodes, respectively. Similarly, the first and second electrode interconnection parts located to be opposed to the diode are soldered only to the other first and second connection electrodes, respectively.
A semiconductor device comprising:
A method of manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.