Semiconductor device and method of manufacturing the same
AssigneesSanyo Electric Co., Ltd., Kanto Sanyo Semiconductors Co., Ltd.
InventorsHirotoshi Kubo, Yukari Shirahata, Shigehito Matsumoto, Masamichi Yamamuro, Koujiro Kameyama, Mitsuo Umemoto
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
Claims15
A semiconductor device, comprising:
- a plurality of pad electrodes formed on a front surface of a semiconductor substrate and electrically connected to an active region;
- at least one backside electrode provided on a back surface of the semiconductor substrate;
- and
- at least one feedthrough electrode penetrating the semiconductor substrate in a thickness direction and connecting the pad electrodes to the at least one backside electrode,
- wherein at least one of the pad electrodes which is connected to a grounding potential is connected to the at least one backside electrode through the feedthrough electrode.
A semiconductor device, comprising:
- a semiconductor substrate including a semiconductor layer having an active element formed therein;
- a first electrode electrically connected to a diffusion region of the active element;
- at least one pad electrode provided to be integrated with the first electrode and to be extended to a peripheral portion of the semiconductor substrate;
- at least one feedthrough electrode provided in a layer under the pad electrode and extended from a front surface of the semiconductor layer to a back surface of the semiconductor substrate;
- and
- at least one backside electrode electrically connected to the feedthrough electrode and provided on the back surface of the semiconductor substrate.
A method of manufacturing a semiconductor device, comprising:
- forming an active region in a front surface of a semiconductor substrate;
- forming a pad on the surface of the semiconductor substrate, the pad being electrically connected to the active region;
- forming a through hole penetrating the semiconductor substrate, the through hole being located under the pad;
- and
- forming a backside electrode on a back surface of the semiconductor substrate, the backside electrode being electrically connected to the pad through a feedthrough electrode formed inside the through hole,
- wherein the through hole is formed outside an isolation region, the isolation region being formed to surround the active region, and
- the feedthrough electrode is formed to be in direct contact with an inner wall of the through hole.
Dependencies are inferred from the claim text.