Semiconductor device and manufacturing method thereof
AssigneeSeiko Epson Corporation
InventorTeruo Takizawa
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Abstract
A semiconductor device includes: a semiconductor layer; a high dielectric constant gate insulation film disposed above the semiconductor layer, the high dielectric constant gate insulation film containing a plurality of elements; a gate electrode disposed on the high dielectric constant gate insulation film; and an impurity region disposed in the semiconductor layer and serving as one of a source region and a drain region, wherein the gate electrode includes a first gate electrode layer made of a material hardly bonded to at least one of the elements included in the high dielectric constant gate insulation film.
Claims14
A semiconductor device, comprising:
- a semiconductor layer;
- a high dielectric constant gate insulation film disposed above the semiconductor layer, the high dielectric constant gate insulation film containing a plurality of elements;
- a gate electrode disposed on the high dielectric constant gate insulation film;
- and
- an impurity region disposed in the semiconductor layer and serving as one of a source region and a drain region, wherein the gate electrode includes a first gate electrode layer made of a material hardly bonded to at least one of the elements included in the high dielectric constant gate insulation film.
A semiconductor device, comprising:
- a semiconductor layer;
- a high dielectric constant gate insulation film disposed above the semiconductor layer;
- a gate electrode disposed on the high dielectric constant gate insulation film;
- and
- an impurity region disposed in the semiconductor layer and serving as one of a source region and a drain region, wherein the high dielectric constant gate insulation layer is an oxide film containing an oxygen atom, and the gate electrode includes a first gate electrode layer made of a material hardly oxidized by the oxygen atom included in the high dielectric constant gate insulation film.
A method for manufacturing a semiconductor device, comprising:
- preparing a semiconductor layer;
- forming a high dielectric constant gate insulation film above the semiconductor layer, the high dielectric constant gate insulation film containing a plurality of elements;
- forming a gate electrode on the high dielectric constant gate insulation film;
- and
- implanting an impurity into the semiconductor layer so as to form an film purity region serving as one of a source region and a drain region, wherein forming the gate electrode includes forming a first gate electrode layer made of a material hardly bonded to at least one of the elements included in the high dielectric constant gate insulation film.
Dependencies are inferred from the claim text.