Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorKenichi FURUTA
Life of this patent
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Abstract
A semiconductor device has a semiconductor substrate, a gate insulator, a gate electrode, and a pair of lightly doped regions. The gate insulator is formed on the semiconductor substrate. The gate electrode is formed on the gate insulator and has first bottom faces and second bottom faces. The distance of the second bottom faces from the surface of the semiconductor substrate is different from that of the first bottom faces, and the first bottom faces and the second bottom faces are disposed alternately along a predetermined direction. The pair of lightly doped regions are formed in regions in the semiconductor substrate except for a region underneath the gate electrode.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulator formed on the semiconductor substrate;
- a gate electrode formed on the gate insulator, the gate electrode having first bottom faces, and second bottom faces in which the distance from the surface of the semiconductor substrate thereto is different from that of the first bottom faces, the first bottom faces and the second bottom faces being disposed alternately along a predetermined direction;
- and
- a pair of lightly doped regions formed in regions of the semiconductor substrate except for a region underneath the gate electrode.
Dependencies are inferred from the claim text.