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US 2006/0220151 A1Published application
Semiconductor device having enhanced performance and method
AssigneeSemiconductor Components Industries, LLC
InventorsGary Loechelt, Robert Davies, David Lutz
Life of this patent
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Abstract
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.
Claims20
A semiconductor device, comprising:
- a substrate having a major surface, wherein the substrate comprises a first conductivity type;
- a pedestal structure overlying a portion of the major surface;
- a conductive material disposed along a side surface of the pedestal structure to define an edge of a first conduction electrode of the semiconductor device;
- a first doped region of a second conductivity type formed in the major surface adjacent the first conduction electrode, wherein a portion of the first doped region forms a channel region when the semiconductor device is in operation;
- an input region of the first conductivity type formed in the first doped region;
- and
- a localized region of doping of the first conductivity type formed in the substrate in proximity to a drain edge of the channel region.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first layer of a first conductivity type and having a major surface;
- a body region of a second conductivity type disposed in the first for forming a channel of the semiconductor device;
- a source region of the first conductivity type formed in the body region;
- a gate structure formed over the major surface adjacent the channel;
- and
- a current spreading region formed in the first layer near a drain end of the channel, wherein the current spreading region comprises the first conductivity type.
3 more elements
A method for forming a semiconductor device, comprising the steps of:
- providing a substrate having a major surface, wherein the substrate comprises a first conductivity type;
- forming a pedestal structure on a portion of the major surface;
- forming a conductive material along a side surface of the pedestal structure to define an edge of a first conduction electrode of the semiconductor device;
- forming a first doped region of a second conductivity type in the major surface adjacent the first conduction electrode, wherein a portion of the first doped region forms a channel region when the semiconductor device is in operation;
- forming an input region of the first conductivity type in the first doped region;
- and
- forming a localized region of doping of the first conductivity in the substrate in proximity to a drain edge of the channel region.
4 more elements
Dependencies are inferred from the claim text.