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US 2006/0220150 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeEudyna Devices Inc.
InventorMasahiro Nishi
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a gate electrode that is provided on a semiconductor layer; a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode; a source wall that extends from the source electrode to a point between the gate electrode and the drain electrode through the region above the gate electrode, the source wall having a joining portion in the extending region; and an electrode portion that is joined to the joining portion and has a region extending closer to the drain electrode than the joining portion.
Claims24
A semiconductor device comprising:
- a gate electrode that is provided on a semiconductor layer;
- a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode;
- a source wall that extends from the source electrode to a point between the gate electrode and the drain electrode through a region above the gate electrode, the source wall having a joining portion in the extending region;
- and
- an electrode portion that is joined to the joining portion and has a region extending closer to the drain electrode than the joining portion.
2 more elements
A semiconductor device comprising:
- a gate electrode that is provided on a semiconductor layer;
- a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode;
- a source wall that extends from the source electrode to a point between the gate electrode and the drain electrode through a region above the gate electrode, the source wall having a joining portion in the extending region;
- and
- an electrode portion that is provided between the gate electrode and the drain electrode, and has a region extending closer to the source electrode than the joining portion, the electrode portion being joined to the joining portion.
2 more elements
A semiconductor device comprising:
- a gate electrode that is provided on a semiconductor layer;
- a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode;
- a source wall that extends from the source electrode at least to a point between the source electrode and the gate electrode, and has a joining portion in the extending region;
- and
- an electrode portion that is joined to the joining portion and connects a region between the source electrode and the gate electrode to a region between the gate electrode and the drain electrode.
2 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode, a source electrode, and a drain electrode on a semiconductor layer, the gate electrode being interposed between the source electrode and the drain electrode;
- forming an insulating layer that covers the gate electrode;
- forming an electrode portion on a portion of the insulating layer between the gate electrode and the drain electrode;
- forming an insulating layer that covers the gate electrode, the source electrode, and the electrode portion;
- forming openings to expose a top face of the source electrode and a top face of the electrode portion;
- and
- forming a source wall that extends through a region above the gate electrode, and is connected to the source electrode and the electrode portion.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode, a source electrode, and a drain electrode on a semiconductor layer, the gate electrode being interposed between the source electrode and the drain electrode;
- forming an insulating layer that covers the gate electrode;
- forming an electrode portion on the insulating layer, extending from the gate electrode or a region closer to the source electrode than the gate electrode, to a region between the gate electrode and the drain electrode;
- forming an insulating layer that covers the gate electrode, the source electrode, and the electrode portion;
- forming openings to expose a top face of the source electrode and a top face of the gate electrode on the electrode portion or a top face of the electrode portion located closer to the source electrode than the gate electrode;
- and
- forming a source wall that has a region extending to a point between the source electrode and the gate electrode, and is connected to the electrode portion and the source electrode.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating layer that covers a source electrode and a drain electrode on a semiconductor layer;
- removing the insulating layer from a portion on the semiconductor layer between the source electrode and the drain electrode;
- simultaneously forming a gate electrode that is located at the portion on the semiconductor layer from which the insulating layer is removed, and an electrode portion that is located at a portion on the insulating layer between the gate electrode and the drain electrode;
- forming an insulating layer that covers the gate electrode, the source electrode, and the electrode portion;
- forming openings to expose a top face of the source electrode and a top face of the electrode portion;
- and
- forming a source wall that extends through a region above the gate electrode, and is connected to the source electrode and the electrode portion.
4 more elements
Dependencies are inferred from the claim text.