Shallow trench isolation formation
AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, Mark Hakey, Steven Holmes, David Horak, Charles Koburger
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Abstract
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate, wherein said semiconductor substrate comprises a trench formed within a first portion of a first surface of said semiconductor substrate;
- a first layer of electrically insulative material located within the trench, wherein said first layer comprises a first recess and a second recess, and wherein the first recess is isolated from the second recess by a portion of the first layer;
- and
- a second layer of electrically insulative material located on said first layer and within a first portion of said first recess and a second portion of said second recess.
A semiconductor structure, comprising:
- a semiconductor substrate, wherein said semiconductor substrate comprises a trench formed within a first portion of a first surface of said semiconductor substrate;
- a first layer of electrically insulative material form within the trench, wherein the first layer comprises a recess;
- a second layer of electrically insulative material within the recess;
- and
- a third layer of electrically insulative material over said second layer, wherein said third layer comprises a first portion extending laterally over and parallel to a second portion of said first surface of said semiconductor substrate and a second portion extending laterally over and parallel to a third portion of said first surface of said semiconductor substrate, wherein said first portion of said third layer comprises a first convex surface, and wherein said second portion of said third layer comprises a second convex surface.
Dependencies are inferred from the claim text.