Semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsYasuhiro Takeda, Koji Yamashita
Life of this patent
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Abstract
A semiconductor device for effectively suppressing noise propagation between circuits. The semiconductor device includes a semiconductor substrate having a main surface. Two circuit regions are defined in the semiconductor substrate. A circuit isolation region is located between the two circuit regions. A dummy diffusion layer is formed in the circuit isolation region. The dummy diffusion layer has an upper surface that is lower than the main surface of the semiconductor substrate.
Claims19
A semiconductor device comprising:
- a semiconductor substrate having a main surface;
- two circuit regions defined in the semiconductor substrate;
- a circuit isolation region located between the two circuit regions;
- and
- a dummy diffusion layer formed in the circuit isolation region, the dummy diffusion layer having an upper surface that is lower than the main surface of the semiconductor substrate.
A method for manufacturing a semiconductor device including a semiconductor substrate having a main surface, two circuit regions defined in the semiconductor substrate, and a circuit isolation region located between the two circuit regions, the method comprising the steps of:
- removing part of the main surface in the circuit isolation region;
- and
- forming a dummy diffusion layer in the circuit isolation region by implanting impurities in the removed part, with the dummy diffusion layer having an upper surface that is lower level than the main surface of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate;
- a first circuit region and a second circuit region defined in the semiconductor substrate;
- and
- a circuit isolation region located between the first and second circuit regions, with the circuit isolation region including a depletion layer.
Dependencies are inferred from the claim text.