Method of manufacturing an electronic arrangement
AssigneePolymer Vision Limited
InventorsBart-Hendrik Huisman, Thomas Cleophas Geuns
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Abstract
The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).
Claims10
A method of manufacturing an electronic arrangement, comprising a thin film transistor with an active layer which contains an organic semiconductor material, said method comprising the following steps:
- applying the active layer with the organic semiconductor material or a precursor material of it onto the substrate;
- applying the protective layer onto the active layer,
- applying, exposing and developing a photoresist,
- patterning the protective layer and the active layer in accordance with the pattern in the photoresist.
Electronic arrangement comprising a thin film transistor with a source electrode and a drain electrode, which are separated from each other by a channel, and a gate electrode, which is separated from the channel by means of dielectric material, said arrangement having a substrate, on one side of which there is:
- an active layer, which comprises an organic semiconductor material, and within which the channel is located;
- a first electrode layer, within which the source electrode and the drain electrode are defined;
- an intermediate layer of dielectric material, and
- a second electrode layer, within which the gate electrode is defined, said gate electrode, when perpendicularly projected onto the first electrode layer, substantially overlapping the channel, characterized in that the side of the active layer which is turned away from the substrate is in contact with a protective layer, which layers are structured in a like pattern.
Dependencies are inferred from the claim text.