Semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsSeiji Otake, Shuichi Kikuchi
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Abstract
In a semiconductor device of the present invention, a thin gate oxide film is formed on a P-type diffusion layer. On the gate oxide film, a gate electrode is formed. N-type diffusion layers are formed in the P-type diffusion layer, and the N-type diffusion layer is used as a drain region. The N-type diffusion layer is diffused in a γ shape at least below the gate electrode. With the structure described above, a diffusion region of the N-type diffusion layer expands and comes to be a low-concentration region in the vicinity of a surface of an epitaxial layer. Thus, it is possible to reduce an electric field from the gate electrode and an electric field between a source and a drain.
Claims5
A semiconductor device comprising:
- a semiconductor layer;
- a drain region and a source region, which are formed in the semiconductor layer;
- a channel region positioned between the drain region and the source region;
- a back gate region in which the channel region is positioned;
- a gate oxide film formed on the semiconductor layer;
- and
- a gate electrode formed on the gate oxide film,
- wherein at least the drain region is formed in the back gate region, the drain region has a slope with respect to a surface of the semiconductor layer, and an angle formed by a tangent line of the slope and the surface of the semiconductor layer gets smaller toward the surface of the semiconductor layer.
Dependencies are inferred from the claim text.