Semiconductor device and fabrication method of the same

A semiconductor device comprising:

• a gate electrode formed above a semiconductor layer;
• a source electrode and a drain electrode formed on the semiconductor layer, the gate electrode being located between the source electrode and the drain electrode;
• and
• a source wall that extends from the source electrode to between the gate electrode and the drain electrode, passing above the gate electrode,
• the source wall including an end part having a width of 10 nm to 300 nm in a direction between the gate electrode and the drain electrode.

A semiconductor device comprising:

• a gate electrode formed above a semiconductor layer;
• a source electrode and a drain electrode formed on the semiconductor layer, the gate electrode being located between the source electrode and the drain electrode;
• and
• an electrode part that is provided between the gate electrode and the drain electrode, extends in a gate width direction, and has comb teeth extending toward the semiconductor layer.

A semiconductor device, comprising:

• a gate electrode formed above a semiconductor layer;
• a source electrode and a drain electrode formed on the semiconductor layer, the gate electrode being located between the source electrode and the drain electrode;
• and
• a source wall that extends from the source electrode to between the gate electrode and the drain electrode, passing above the gate electrode,
• the source wall having an end part that extends in a gate width direction and has comb teeth extending toward the semiconductor layer.

A fabrication method of a semiconductor device comprising:

• forming a gate electrode above a semiconductor layer so as to be interposed between a source region and a drain region of the semiconductor layer;
• forming an insulating layer covering the semiconductor layer and the gate electrode;
• and
• forming an electrode part on the insulating layer between the drain region and the gate electrode and the electrode part has a width of 10 nm to 300 nm in a direction between the gate electrode and the drain region.

A fabrication method of a semiconductor device comprising:

• forming a gate electrode above a semiconductor layer so as to be interposed between a source region and a drain region of the semiconductor layer;
• forming an insulating layer covering the semiconductor layer and the gate electrode;
• exposing the source region;
• and
• forming a source wall so that the source wall extends from the source region to between the gate electrode and the drain region passing above the gate electrode, and the source wall includes an end part having a width of 10 nm to 300 nm in a direction between the gate electrode and the drain region.

A fabrication method of a semiconductor device comprising:

• forming a gate electrode above a semiconductor layer so as to be interposed between a source region and a drain region of the semiconductor layer;
• forming an insulating layer covering the semiconductor layer and the gate electrode;
• and
• forming an electrode part on the insulating layer between the drain region and the gate electrode,
• wherein the electrode part has an end part that extends in a direction in which the gate electrode extends, and has comb teeth extending toward the semiconductor layer.

A fabrication method of a semiconductor device comprising:

• forming a gate electrode above a semiconductor layer so as to be interposed between a source region and a drain region of the semiconductor layer;
• forming an insulating layer covering the semiconductor layer and the gate electrode;
• exposing the source region;
• and
• forming a source wall so that the source wall extends from the source region to between the gate electrode and the drain region, passing above the gate electrode, and the source wall has an end part that extends in a direction in which the gate electrode extends, and has comb teeth extending toward the semiconductor layer.