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AssigneeSTMicroelectronics S.r.l.
InventorsFerruccio Frisina, Giuseppe Ferla, Angelo Magri, Antonio Grimaldi, Gaetano Bazzano
Estimating the term…
Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks connected to a gate pad and at least a connection layer arranged in series to at least one of said conductive strip. Such gate structure comprising at least a plurality of independent islands formed on the upper surface of the conductive strips and suitably formed on the connection layers. Said islands being realized with at least one second conductive material such as silicide.
Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of strips realized with a first conductive material characterized in that said gate structure comprises a plurality of independent islands realized with at least one second conductive material and projecting in said plurality of conductive strips.
An MOS device, comprising:
An integrated circuit, comprising:
A system, comprising:
An MOS device, comprising:
An integrated circuit, comprising:
An integrated circuit, comprising:
A method, comprising:
Dependencies are inferred from the claim text.