Semiconductor device including a dopant blocking superlattice
AssigneeRJ Mears, LLC
InventorsRobert Stephenson, Marek Hytha
Life of this patent
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Abstract
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET). The at least one MOSFET may include a body, a channel layer adjacent the body, and a dopant blocking superlattice between the body and the channel layer. The dopant blocking superlattice may include a plurality of stacked groups of layers. Each group of layers of the dopant blocking superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Claims23
A semiconductor device comprising:
- at least one metal oxide field-effect transistor (MOSFET) comprising
- a body,
- a channel layer adjacent said body, and
- a dopant blocking superlattice between said body and said channel layer and comprising a plurality of stacked groups of layers, each group of layers of said dopant blocking superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
A semiconductor device comprising:
- at least one metal oxide field-effect transistor (MOSFET) comprising
- a body,
- a channel layer adjacent said body,
- a gate overlying said channel layer,
- source and drain regions laterally adjacent said channel layer, and
- a dopant blocking superlattice between said body and said channel layer and comprising a plurality of stacked groups of layers, each group of layers of said dopant blocking superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions.
Dependencies are inferred from the claim text.