Semiconductor device having step gates and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsByung Eun, Jung Lee
Life of this patent
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Abstract
A semiconductor device having step gates includes a semiconductor substrate including first regions having relatively low steps at both ends of an active region defined by trench isolation films and a second region having a relatively high step at a central part of the active region, a groove having a predetermined depth being formed at the central part of the second region, step gate stacks formed on the boundary between the first region and second region while exposing the groove of the second region, first impurity regions formed in the first regions exposed by the step gate stacks, and a second impurity region formed in the second region exposed by the step gate stacks while enclosing the groove of the second region.
Claims11
A semiconductor device having step gates, the device comprising:
- a semiconductor substrate including first regions having relatively low steps at both ends of an active region defined by trench isolation films, a second region having a relatively high step at a central part of the active region, and a groove having a predetermined depth being formed at a central part of the second region;
- step gate stacks formed on the boundary between the first regions and second region while exposing the groove of the second region;
- first impurity regions formed in the first regions exposed by the step gate stacks;
- and
- a second impurity region formed in the second region exposed by the step gate stacks while enclosing the groove of the second region.
A method of manufacturing a semiconductor device having step gates, the method comprising:
- forming trench isolation films on a semiconductor substrate using hard mask film patterns covering an active region thereof;
- removing a portion of the hard mask film patterns to expose a first surface and second surface of the active region, while allowing the first and second surfaces to be separated by the hard mask film patterns formed at a central part of the active region;
- forming selective epitaxial growth layers on the first and second surfaces of the active region;
- removing the hard mask film patterns;
- forming step gate stacks on the boundary between the semiconductor substrate of the active region and selective epitaxial growth layer;
- and
- forming first impurity regions and a second impurity region in the semiconductor substrate using the step gate stacks as an ion implantation mask.
Dependencies are inferred from the claim text.