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US 2006/0220110 A1Published application
Integrated circuit with protected implantation profiles and method for the formation thereof
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsTommy Lai, Pradeep Yelehanka, Jia Zhen Zheng, Weining Li
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Abstract
An integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer.
Claims10
An integrated circuit structure, comprising:
- a semiconductor substrate;
- at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate;
- and
- at least one implantation region in at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer having diffusion unaffected by the oxide-nitride-oxide dielectric layer.
1 more element
An integrated circuit structure, comprising:
- a semiconductor substrate having an array area and a periphery area;
- an oxide-nitride-oxide dielectric layer formed on the array area on the semiconductor substrate;
- a layer of polysilicon formed on the oxide-nitride-oxide dielectric layer;
- the layer of polysilicon, oxide-nitride-oxide dielectric layer, and semiconductor substrate being etched to form shallow trench isolation trenches;
- a polished oxide gap fill filling the shallow trench isolation trenches;
- and
- a well and threshold implantation region in the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer over the array area, the well and threshold implantation having diffusion unaffected by the oxide-nitride-oxide dielectric layer.
4 more elements
Dependencies are inferred from the claim text.