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US 2006/0220108 A1Published application
Field-effect transistor in semiconductor device, method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorShingo Hashimoto
Life of this patent
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Abstract
A field-effect transistor has: a substrate having a first cavity; a gate electrode buried in the substrate; and diffusion layers formed in the substrate and being in contact with the first cavity. A channel region is formed substantially perpendicular to a surface of the substrate between the diffusion layers.
Claims20
A field-effect transistor comprising:
- a substrate having a first cavity;
- a gate electrode buried in said substrate;
- and
- diffusion layers formed in said substrate and being in contact with said first cavity.
1 more element
A field-effect transistor comprising:
- a substrate having a first cavity;
- a gate electrode;
- and
- diffusion layers as a source and a drain,
- wherein said gate electrode and said diffusion layers surround said first cavity in a plane parallel to a surface of said substrate.
2 more elements
A semiconductor device comprising:
- a substrate having a cavity;
- and
- a first field-effect transistor formed on said substrate,
- wherein said first field-effect transistor has:
- a gate electrode buried in said substrate;
- and
- diffusion layers formed in said substrate and being in contact with said cavity.
4 more elements
Dependencies are inferred from the claim text.