Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate divided into a memory cell region in which a memory cell is formed and a peripheral circuit region in which a peripheral circuit for driving the memory cell is formed;
• a gate insulating film formed in each region on the semiconductor substrate;
• a plurality of gate electrodes formed on the gate insulating film of each region;
• a first insulating film formed between the gate electrodes of each region and on the gate electrodes;
• a first conductive layer formed between the adjacent gate electrodes so as to be located upper than an upper surface of the first insulating film in the memory cell region;
• a second conductive layer formed so as to be located between the gate electrodes adjacent to a surface side of the semiconductor substrate in the memory cell region;
• a plurality of first connection wiring layers formed in a plurality of first holes which are formed in the first insulating film so as to extend through the first and second conductive layers in the memory cell region respectively, the first connection wiring layers electrically connecting each of the first and second conductive layers to the other;
• a third conductive layer formed upper than an upper surface of the first insulating film of the peripheral circuit region so as to be located between the adjacent gate electrodes;
• a fourth conductive layer formed between the gate electrodes adjacent to a surface side of the semiconductor substrate in the peripheral circuit region;
• a plurality of second connection wiring layers formed in a plurality of second holes which are formed in the first insulating film so as to extend through the third and fourth conductive layers in the peripheral circuit region respectively, the second connection wiring layers electrically connecting each of the third and fourth conductive layers to the other;
• a first spacer insulating film functioning as a spacer which is formed on inner sidewall surfaces of the second holes in the peripheral circuit region and outer sidewall surfaces of the first connection wiring layers;
• and
• a second spacer insulating film functioning as a spacer which is formed on inner sidewall surfaces of the second holes in the peripheral circuit region and inner sidewall surfaces of the second holes and outer sidewall surfaces of the second connection insulating layers.

A method of manufacturing a semiconductor device, comprising:

• forming a conductive layer in each of a memory cell region in which a memory cell is to be formed and a peripheral circuit region in which a peripheral circuit for driving the memory cell is to be formed;
• forming a first insulating film so that the conductive layer of each region is covered by the first insulating film;
• forming a plurality of holes in the first insulating film of each region by removing a plurality of predetermined regions of the first insulating film in each region;
• and
• forming second insulating films on inner sidewall surfaces of the holes in each region.