US 2006/0220102 A1 · Non-volatile memory cell including a capacitor structure and processes for forming the same

Abstract

A non-volatile memory cell can include a substrate, an active region overlying the substrate, and a capacitor structure overlying the substrate. From a plan view, the capacitor structure surrounds the active region. In one embodiment, the non-volatile memory cell includes a floating gate electrode and a control gate electrode. The capacitor structure comprises a first capacitor portion, and the first capacitor portion comprises a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is electrically connected to the floating gate electrode, and the second capacitor electrode is electrically connected to the control gate electrode. A process for forming the non-volatile memory cell can include forming an active region over a substrate, and forming a capacitor structure over the substrate, wherein from a plan view, the capacitor structure surrounds the active region.

Claims20

Dependent claims

A non-volatile memory cell comprising:

a substrate;
an active region overlying the substrate;
and
a capacitor structure overlying the substrate, wherein from a plan view, the capacitor structure surrounds the active region.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

11/083,878Filed 18 Mar 2005

Published

5 Oct 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10B 41/30
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the memory core region
H10B 69/00
Erasable-and-programmable rom [eprom] devices not provided for in groups h10b41/00 - h10b63/00
H10D 30/6891
Floating-gate IGFETs: characterised by the shapes, relative sizes or dispositions of the floating gate electrode
H10D 64/035
Of data-storage electrodes: comprising conductor-insulator-conductor-insulator-semiconductor structures

Non-volatile memory cell including a capacitor structure and processes for forming the same

Life of this patent

Non-volatile memory cell including a capacitor structure and processes for forming the same

Life of this patent

Abstract

Claims20