Semiconductor device

A semiconductor device comprising:

• an isolation region which divides a semiconductor into a plurality of element formation regions;
• an insulating layer formed on the semiconductor layer;
• and
• a wiring layer traversing over the isolation region, and wired from one to other one of the element formation regions on a top surface of the insulating film,
• and further comprising in the insulating layer under the wiring layer:
• a first conductive plate arranged, in a floating state, in a manner covering over a junction region between the isolation region and the semiconductor layer;
• and
• a second conductive plate arranged, in a floating state, between the first conductive plate and the wiring layer, and formed so that at least a part of a region thereof is formed to traverse each of the first conductive plate and the wiring layer.

A semiconductor device comprising:

• an isolation region formed in a semiconductor layer;
• a plurality of semiconductor elements formed in a manner surrounded by the isolation region;
• a wiring layer formed in an insulating process, and extending from one to other one of the semiconductor elements with passing the isolation region through, the wiring layer being fixed at a desired electric potential;
• a first conductive plate arranged, under the wiring layer, in a manner overlapping the wiring layer, and electrically connected to the isolation region, the first conductive plate having been formed in an insulating process;
• and
• a second conductive plate arranged, between the first conductive plate and the wiring layer, in a manner overlapping the first conductive plate and the wiring layer, the second conductive plate having been formed in an insulating process,
• wherein an electric potential of the second conductive plate is adjusted by changing at least any one of a dimension where the second conductive plate and the wiring layer overlap, and a dimension where the second and first conductive plates overlap.