Titanium oxide extended gate field effect transistor
AssigneeNational Yunlin University of Science and Technology
InventorsJung-Chuan Chou, Hung-Hsi Yang
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Abstract
A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.
Claims21
A titanium oxide extended gate field effect transistor (EGFET), comprising:
- a semiconductor substrate;
- a titanium oxide layer on the semiconductor substrate;
- a metal wire coupled to the titanium oxide layer;
- a seal covering the metal wire and exposing the titanium oxide layer;
- and
- a metal-oxide-semiconductor field effect transistor (MOSFET) having a gate coupled to titanium oxide layer via the metal wire.
A system of measuring sensitivity of the titanium oxide EGFET, comprising:
- a semiconductor parameter analyzer;
- a metal-oxide-semiconductor field effect transistor (MOSFET) having a source and a drain coupled to the semiconductor parameter analyzer;
- a sensing device coupled to a gate of the MOSFET
- a reference electrode coupled to the semiconductor parameter analyzer;
- a temperature controller;
- a thermocouple coupled to the temperature controller;
- and
- a heater coupled to the temperature controller;
- and
- a light isolator isolating the sensing device, the reference electrode, and the thermocouple from light radiation.
A method of measuring sensitivity of a titanium oxide EGFET, comprising:
- immersing a titanium oxide membrane of the titanium oxide EGFET in a solution;
- varying pH value of the solution at a fixed temperature and recording I-V curves of the titanium oxide EGFET with a semiconductor parameter analyzer;
- determining sensitivity of the titanium oxide EGFET at the fixed temperature from data of the I-V curves at a fixed current.
Dependencies are inferred from the claim text.