Back to results
US 2006/0220091 A1Published application
Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakumi Mikawa, Yuji Judai, Toshie Kutsunai
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
Claims13
1-38. (canceled)
A semiconductor device comprising:
- a first hydrogen barrier film;
- a capacitor device formed on the first hydrogen barrier film;
- and
- a second hydrogen barrier film formed to cover the capacitive device,
- wherein the first and second hydrogen barrier films adhere to each other so that no silicon oxide film is interposed between the first and second hydrogen barrier films.
2 more elements
Dependencies are inferred from the claim text.