US 2006/0220090 A1 · Semiconductor device with a high-k gate dielectric and a metal gate electrode

Abstract

A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed over a channel that is positioned within a substrate, and a metal gate electrode that is formed on the high-k gate dielectric layer. The high-k gate dielectric layer has off-state leakage characteristics that are superior to those of a silicon dioxide based gate dielectric, and on-state mobility characteristics that are superior to those of a high-k gate dielectric that comprises an isotropic material.

Claims20

Dependent claims

A semiconductor device comprising:

a high-k gate dielectric layer that is formed over a channel that is positioned within a substrate, the high-k gate dielectric layer having:
off-state leakage characteristics that are superior to those of a silicon dioxide based gate dielectric, and
on-state mobility characteristics that are superior to those of a high-k gate dielectric that comprises an isotropic material;
and
a metal gate electrode that is formed on the high-k gate dielectric layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/089,247Filed 23 Mar 2005

Published

5 Oct 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 64/689
Characterised by the insulator, e.g. by the gate insulator: having ferroelectric layers
H10D 30/792
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: comprising applied insulating layers, e.g. stress liners
H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates

Semiconductor device with a high-k gate dielectric and a metal gate electrode

Life of this patent

Semiconductor device with a high-k gate dielectric and a metal gate electrode

Life of this patent

Abstract

Claims20