Magnetoresistive effect element and method for fabricating the same
AssigneeFujitsu Limited
InventorsShinjiro Umehara, Hiroshi Ashida, Masashige Sato, Kazuo Kobayashi
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Abstract
The magnetoresistive effect element comprises a first ferromagnetic layer 50, a nonmagnetic layer 52 formed on the first ferromagnetic layer 50, a second ferromagnetic layer 54 formed on the nonmagnetic layer 52, and a sidewall insulating film 64 formed on the side wall of the second ferromagnetic layer 54. The end of the first ferromagnetic layer 50 is aligned with the end of the sidewall insulating film 64. Whereby the disalignment between the first ferromagnetic layer and the second ferromagnetic layer can be prevented.
Claims14
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a nonmagnetic layer formed on the first ferromagnetic layer;
- a second ferromagnetic layer formed on the nonmagnetic layer;
- and
- a sidewall insulating film formed on a side wall of the second ferromagnetic layer,
- an end of the first ferromagnetic layer being aligned with an end of the sidewall insulating film.
A method for fabricating a magnetoresistive effect element comprising the steps of:
- forming a first ferromagnetic layer;
- forming a nonmagnetic layer on the first ferromagnetic layer;
- forming a second ferromagnetic layer on the nonmagnetic layer;
- forming a cap layer of a nonmagnetic material on the second ferromagnetic layer;
- patterning the cap layer and the second ferromagnetic layer into a prescribed configuration;
- forming a sidewall insulating film on the side wall of the patterned cap layer and second ferromagnetic layer;
- and
- patterning the nonmagnetic layer and the first ferromagnetic layer with the cap layer and the sidewall insulating film as the mask.
A magnetic memory device comprising:
- a first interconnection;
- a second interconnection interconnecting the first interconnection;
- and
- a magnetoresistive effect element formed at an intersection of the first interconnection and the second interconnection,
- the magnetoresistive effective element including:
- a first ferromagnetic layer;
- a nonmagnetic layer formed on the first ferromagnetic layer;
- a second ferromagnetic layer formed on the nonmagnetic layer;
- and
- a sidewall insulating film formed on a side wall of the second ferromagnetic layer,
- an end of the first ferromagnetic layer being aligned with an end of the sidewall insulating film.
Dependencies are inferred from the claim text.