Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorKazuhide Abe
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a first electrode that is formed over said semiconductor substrate, a capacitive insulating film that is formed on the first electrode and is made of a metal oxide ferroelectric, a second electrode that is formed on the capacitive insulating film, an insulating film that has a first opening exposing a portion of an upper side of the second electrode and is formed so that it covers the first electrode, the capacitive insulating film, and the second electrode, a first barrier film having an amorphous structure which is formed inside the first opening and on the insulating film, and a wiring film that is formed over the first barrier film.
Claims21
1 A semiconductor device comprising:
- a semiconductor substrate;
- a first electrode that is formed over said semiconductor substrate;
- a capacitive insulating film that is formed on said first electrode and is comprised of a metal oxide ferroelectric;
- a second electrode that is formed on said capacitive insulating film;
- an insulating film that has a first opening exposing a portion of an upper side of said second electrode and is formed so as to cover said first electrode, said capacitive insulating film, and said second electrode;
- a first barrier film with an amorphous structure, which is formed inside said first opening and on said insulating film;
- and
- a wiring film that is formed over said first barrier film.
2 The semiconductor device according to claim 1, further comprising a second opening exposing a portion of an upper side of said first electrode;
- and
- wherein said first barrier film is formed inside said second opening.
3 The semiconductor device according to claim 2, further comprising a reaction film on said first barrier film.
4 The semiconductor device according to claim 1, further comprising a second barrier film having a crystal structure on said first barrier film, said second barrier film comprising a metal nitride film selected from a group consisting of TiN, ZrN, and WN.
5 The semiconductor device according to claim 1, further comprising a reaction film on said first barrier film.
6 The semiconductor device according to claim 1, wherein said first barrier film is mainly comprised of TaNx.
7 The semiconductor device according to claim 1, wherein said first electrode and said second electrode are mainly comprised of Pt.
8 The semiconductor device according to claim 1, wherein said wiring film comprises one selected from a group consisting of Al, an alloy whose major constituent is Al, Cu, and an alloy whose major constituent is Cu.
9 The semiconductor device according to one of claims 5, wherein said reaction film comprises at least one selected from the group consisting of Ti, Mg, Mn, Ni, Hf, Li, Sc, Zr, Si, Pb, Nb, Zn, Sr, In, and Ag, and forms an alloy layer by chemically reacting with said wiring film.
10 A semiconductor device comprising:
- a semiconductor substrate;
- a first electrode that is formed over said semiconductor substrate;
- a capacitive insulating film that is formed on said first electrode and is comprised of a metal oxide ferroelectric;
- a second electrode that is formed on said capacitive insulating film;
- an insulating film that has a first opening exposing a portion of an upper side of said second electrode and is formed so as to cover said first electrode, said capacitive insulating film, and said second electrode;
- a first barrier film that is formed inside said first opening and on said insulating film;
- a second barrier film that is formed by oxidizing a surface of said first barrier film;
- and
- a wiring film that is formed above said first barrier film and said second barrier film.
11 The semiconductor device according to claim 10, further comprising a second opening exposing a portion of an upper side of said first electrode;
- and
- wherein said first barrier film and said second barrier film are formed inside said second opening.
12 The semiconductor device according to claim 11, further comprising a reaction film on said second barrier film.
13 The semiconductor device according to claim 10, further comprising a reaction film on said second barrier film.
14 The semiconductor device according to claim 10,
- wherein said first barrier film is comprised of TiN;
- and
- said second barrier film is either a laminated film comprised of TiO2 and TixOyNz or a single layer film comprised of TixOyNz.
15 The semiconductor device according to claim 13, wherein said reaction film is comprised of at least one selected from the group consisting of Ti, Mg, Mn, Ni, Hf, Li, Sc, Zr, Si, Pb, Nb, Zn, Sr, In, and Ag, and forms an alloy layer by chemically reacting with said wiring film.
16 A semiconductor device comprising:
- a semiconductor substrate;
- a first electrode that is formed over said semiconductor substrate;
- a capacitive insulating film that is formed on said first electrode and is comprised of a metal oxide ferroelectric;
- a second electrode that is formed on said capacitive insulating film;
- an insulating film that has a first opening exposing a portion of an upper side of said second electrode and formed so as to cover said first electrode, said capacitive insulating film, and said second electrode;
- a first barrier film that is formed inside said first opening and on said insulating film;
- a reaction film that is formed on said first barrier film;
- and
- a wiring film that is formed over said first barrier film and said reaction film.
17 The semiconductor device according to claim 16, further comprising a second opening exposing a portion of an upper side of said first electrode;
- and
- wherein said first barrier film and said reaction film are formed inside said second opening.
18 The semiconductor device according to claim 16, wherein said first barrier film is comprised of TiN.
19 The semiconductor device according to one of claim 16, wherein said reaction film is comprised of at least one selected from the group consisting of Ti, Mg, Mn, Ni, Hf, Li, Sc, Zr, Si, Pb, Nb, Zn, Sr, In, and Ag, and forms an alloy layer by chemically reacting with said wiring film.
20 The semiconductor device according to claim 16, wherein said first electrode and said second electrode are mainly comprised of Pt.
21 The semiconductor device according to claim 16, wherein said wiring film is comprised of one selected from the group consisting of Al, an alloy whose major constituent is Al, Cu, and an alloy whose major constituent is Cu.