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US 2006/0220081 A1Published application
Semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorsKouichi Nagai, Hitoshi Saito, Kaoru Sugawara, Makoto Takahashi, Masahito Kudo, Kazuhiro Asai, Yukimasa Miyazaki, Katsuhiro Sato, Kaoru Saigoh
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Abstract
After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an Al2O3 film is formed.
Claims22
A semiconductor device, comprising
- an element;
- a conductive pad connected to said element;
- a silicon oxide film formed around said conductive pad;
- and
- a penetration inhibiting film inhibiting penetration of hydrogen and moisture into said silicon oxide film.
2 more elements
A semiconductor device, comprising
- an element;
- a conductive pad connected to said element;
- a silicon oxide film formed from a portion around said conductive pad to a portion at an outer periphery of a chip on which said element is mounted;
- and
- a penetration inhibiting film covering said silicon oxide film from the portion around said conductive pad to the portion at the outer periphery of the chip and inhibiting penetration of hydrogen or moisture.
2 more elements
A manufacturing method of a semiconductor, comprising the steps of:
- forming an element;
- forming a conductive pad connected to the element;
- forming a silicon oxide film around the conductive pad;
- and
- forming a penetration inhibiting film which inhibits penetration of hydrogen and moisture into the silicon oxide film.
2 more elements
Dependencies are inferred from the claim text.