Semiconductor light receiving device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorNobuyuki Nagashima
Life of this patent
Estimating the term…
Abstract
A semiconductor light receiving device includes a plurality of photodiode units, each of which is configured to convert a received light into an electric signal; and a separating unit configured to electrically separates the plurality of photodiode units from each other. The impurity concentration of a surface portion of the separating unit is equal to or lower than a first concentration. The first concentration is a concentration at which the light receiving sensitivity of the separating unit to light is substantially equal to the light receiving sensitivity of each of the plurality of photodiode units of the light. A wavelength of the light is equal to or longer than that of blue-violet light.
Claims14
A semiconductor light receiving device comprising:
- a plurality of photodiode units, each of which is configured to convert a received light into an electric signal;
- and
- a separating unit configured to electrically separates said plurality of photodiode units from each other,
- wherein the impurity concentration of a surface portion of said separating unit is equal to or lower than a first concentration,
- said first concentration is a concentration at which the light receiving sensitivity of said separating unit to light is substantially equal to the light receiving sensitivity of each of said plurality of photodiode units of said light, and
- a wavelength of said light is equal to or longer than that of blue-violet light.
A semiconductor light receiving device comprising:
- a semiconductor substrate configured to have a first conductivity type;
- a deposition layer configured to be formed on said semiconductor substrate and have a second conductivity type;
- a plurality of first embedded layers configured to be formed in a plurality of region adjacent to each other on a surface of said deposition layer and have said second conductivity type;
- and
- a second embedded layer configured to electrically separate said deposition layer of said plurality of said region into each other, extend from a surface of said deposition layer to said semiconductor substrate and have said first conductivity type,
- wherein the impurity concentration of a surface portion of said second embedded layer is equal to or lower than a first concentration,
- said first concentration is a concentration at which the light receiving sensitivity of said second embedded layer to light is substantially equal to the light receiving sensitivity of each of said plurality of photodiode units to said light, and
- a wavelength of said light is equal to or longer than that of blue-violet light.
Dependencies are inferred from the claim text.