Methods of fabricating self-aligned source of flash memory device
OwnerIn Kiminventor
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Abstract
Example methods of fabricating semiconductor devices are disclosed. One example method may include depositing an oxide layer, a first conducting layer for a floating gate, a dielectric layer, and a second conducting layer for a control gate in sequence on a semiconductor substrate including a device isolation layer; forming gates by removing some parts of the oxide layer, the first conducting layer, the dielectric layer, and the second conducting layer; forming a mask pattern for a self-aligned source over the substrate including the gates; removing the device isolation layer exposed between the gates; performing an ion implantation process; and eliminating damage generated during the ion implantation process or the removal of the device isolation layer.
Claims13
A semiconductor device, comprising:
- a semiconductor substrate comprising a trench formed by removing at least a portion of a device isolation layer;
- a plurality of gates each comprising an oxide layer, a first conducting layer for a floating gate, a dielectric layer, and a second conducting layer for a control gate, wherein the trench is formed in the semiconductor substrate between the plurality of gates;
- a self-aligned source formed by an impurity ion implantation process in the trench and a selective chemical dry etch for eliminating damage resulting from the ion implantation or the removing of at least a portion of a device isolation layer;
- and
- an insulating layer formed over the resulting substrate .
Dependencies are inferred from the claim text.