Carbon nanotube energy well (cnew) field effect transistor
AssigneeIntel Corporation
InventorsSuman Datta, Marko Radosavljevic, Brian Doyle, Jack Kavalieros, Justin Brask, Amlan Majumdar, Robert Chau
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Abstract
A structure to form an energy well within a Carbon nanotube is described. The structure includes a doped semiconductor region and an undoped semiconductor region. The Carbon nanotube is between the doped semiconductor region and the undoped semiconductor region. The structure also includes a delta doped semiconductor region. The undoped semiconductor region is between the Carbon nanotube and the delta doped region. The delta doped semiconductor region is doped opposite that of the doped semiconductor region.
Claims16
A transistor comprising a Carbon nanotube channel between a doped semiconductor region and an undoped semicondcutor region, said undoped semiconductor region between said Carbon nanotube and a delta doped region that is doped opposite that of said doped semiconductor region.
-16. (canceled)
A structure to form an energy well within a Carbon nanotube, comprising:
- a) a doped semiconductor region;
- b) an undoped semiconductor region, said Carbon nanotube between said doped semiconductor region and said undoped semiconductor region;
- and,
- c) a delta doped semiconductor region, said undoped semiconductor region between said Carbon nanotube and said delta doped region, said delta doped semiconductor region doped opposite that of said doped semiconductor region.
Dependencies are inferred from the claim text.