US 2006/0220068 A1 · Solid-state image pick-up unit and method of manufacturing the same

Abstract

A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, wherein the electric charge transfer portion comprises: an electric charge transfer electrode including a first layer electrode and a second layer electrode; and a gate oxide film, the gate oxide film comprises a second gate oxide film formed under the second layer electrode, the second gate oxide film comprising an ONO film which comprises a SiO film, a SiN film and a SiO film in this order, and the second gate oxide film is continuously formed to cover whole of a region between the first layer electrode and the second layer electrode and a region under the second layer electrode.

Claims17

Dependent claims

A solid-state image pick-up unit comprising:

a semiconductor substrate comprising an area in which a photoelectric converting portion is formed;
and
an electric charge transfer portion that transfers an electric charge formed in the photoelectric converting portion, the electric charge transfer portion being formed in the semiconductor substrate,
wherein an electric charge transfer electrode for the electric charge transfer portion comprises a first layer electrode and a second layer electrode;
a gate oxide film under the second layer electrode comprises a lamination structure (ONO) film which comprises:
a bottom oxide film of a silicon oxide (SiO) film provided on a surface of the semiconductor substrate;
a silicon nitride (SiN) film formed on the bottom oxide film;
and a top oxide film of a silicon oxide (SiO) film provided on the silicon nitride film, and
the ONO film is extended from a region under the second layer electrode to a region between the first layer electrode and the second layer electrode, so as to cover whole of the regions.

6 more elements

A method of manufacturing a solid-state image pick-up unit, which forms, on a semiconductor substrate comprising an area in which photoelectric converting portion is formed, an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, the method comprising

a step of forming gate oxide films of the electric charge transfer portion on the semiconductor substrate comprising the steps of:
sequentially laminating, on a surface of the semiconductor substrate, a bottom oxide film of a silicon oxide (SiO) film, a silicon nitride (SiN) film formed on the bottom oxide film and a top oxide film of a silicon oxide (SiO) film formed on the silicon nitride film, to form a first lamination structure (ONO) film;
forming a first layer conductive film on the first ONO film and patterning the first layer conductive film to form a first layer electrode;
sequentially laminating, on the first layer electrode, a bottom oxide film of a silicon oxide (SiO) film, a silicon nitride (SiN) film formed on the bottom oxide film, and a top oxide film of a silicon oxide (SiO) film provided on the silicon nitride film, to form a second lamination structure (ONO) film;
and
forming a second layer conductive film on the second ONO film and patterning the second layer conductive film, to form a second layer electrode.

3 more elements

Dependencies are inferred from the claim text.

Solid-state image pick-up unit and method of manufacturing the same

Life of this patent

Solid-state image pick-up unit and method of manufacturing the same

Life of this patent

Abstract

Claims17