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US 2006/0220065 A1Published application
Semiconductor device and fabrication method therefor
AssigneeEudyna Devices Inc.
InventorsTakeshi Kawasaki, Ken Nakata, Seiji Yaegashi
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Abstract
A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.
Claims11
A semiconductor device comprising:
- a substrate;
- a GaN-based semiconductor layer formed on the substrate;
- a gate electrode buried in the GaN-based semiconductor layer;
- a source electrode and a drain electrode formed on opposing sides of the gate electrode;
- a first recess portion formed between the gate electrode and the source electrode;
- and
- a second recess portion formed between the gate electrode and the drain electrode,
- wherein the first recess portion has a depth smaller than that of the second recess portion.
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A fabrication method of a semiconductor device comprising:
- forming a GaN-based semiconductor layer on a substrate;
- etching the GaN-based semiconductor layer to form a first opening;
- etching the GaN-based semiconductor layer to form a second opening that partially overlaps the first opening;
- and
- forming a gate electrode in a portion where the first opening and the second opening overlap each other.
2 more elements
Dependencies are inferred from the claim text.